Non-Ohmic conduction in In2O3-Bi2O3 ceramics
Identifieur interne : 000836 ( Main/Repository ); précédent : 000835; suivant : 000837Non-Ohmic conduction in In2O3-Bi2O3 ceramics
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Abstract
The semiconductor In2O3-Bi2O3 ceramics exhibit unusual behaviour: The current quasi-saturation (current limiting) in dc current-voltage characteristic is accompanied by low-frequency (∼1 Hz) current oscillations. In this paper some electrical properties of In2O3-Bi2O3 ceramics are studied and a mechanism of non-Ohmic conduction in this material is suggested. The electrical conduction is controlled by the grain-boundary potential barriers. Assuming that the barrier heights at different grain boundaries in a sample are not identical, the current quasi-saturation is explained qualitatively by capture of electrons at the interface states and respective increase in the height of key barriers. A mechanism of current oscillations is related to the current quasi-saturation. An increase in the height of key barriers leads to a raise of the voltage drop at these barriers and to Joule heating of barrier regions followed by decrease in the barrier height. The suggested mechanism of non-Ohmic conduction is confirmed by the obtained experimental data.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Non-Ohmic conduction in In<sub>2</sub>O<sub>3</sub>-Bi<sub>2</sub>O<sub>3</sub> ceramics</title><author><name sortKey="Glot, A B" uniqKey="Glot A">A. B. Glot</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Universidad Tecnológica de la Mixteca, Huajuapan de León</s1><s2>Oaxaca 69000</s2><s3>MEX</s3><sZ>1 aut.</sZ></inist:fA14><country>Mexique</country><wicri:noRegion>Oaxaca 69000</wicri:noRegion></affiliation></author><author><name sortKey="Mazurik, S V" uniqKey="Mazurik S">S. V. Mazurik</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Dniepropetrovsk National University</s1><s2>Dniepropetrovsk 49010</s2><s3>UKR</s3><sZ>2 aut.</sZ></inist:fA14><country>Ukraine</country><wicri:noRegion>Dniepropetrovsk National University</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0305126</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0305126 INIST</idno><idno type="RBID">Pascal:13-0305126</idno><idno type="wicri:Area/Main/Corpus">000723</idno><idno type="wicri:Area/Main/Repository">000836</idno></publicationStmt><seriesStmt><idno type="ISSN">0921-4526</idno><title level="j" type="abbreviated">Physica, B Condens. matter</title><title level="j" type="main">Physica. B, Condensed matter</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Barrier height</term><term>Bismuth oxide</term><term>Charge carrier trapping</term><term>Electrical conductivity</term><term>Grain boundaries</term><term>IV characteristic</term><term>Indium oxide</term><term>Interface states</term><term>Joule heating</term><term>Oscillations</term><term>Potential barrier</term><term>Semiconductor materials</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Caractéristique courant tension</term><term>Oscillation</term><term>Conductivité électrique</term><term>Joint grain</term><term>Barrière potentiel</term><term>Hauteur barrière</term><term>Piégeage porteur charge</term><term>Etat interface</term><term>Effet Joule</term><term>Oxyde d'indium</term><term>Oxyde de bismuth</term><term>Semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The semiconductor In<sub>2</sub>O<sub>3</sub>-Bi<sub>2</sub>O<sub>3</sub> ceramics exhibit unusual behaviour: The current quasi-saturation (current limiting) in dc current-voltage characteristic is accompanied by low-frequency (∼1 Hz) current oscillations. In this paper some electrical properties of In<sub>2</sub>O<sub>3</sub>-Bi<sub>2</sub>O<sub>3 </sub>ceramics are studied and a mechanism of non-Ohmic conduction in this material is suggested. The electrical conduction is controlled by the grain-boundary potential barriers. Assuming that the barrier heights at different grain boundaries in a sample are not identical, the current quasi-saturation is explained qualitatively by capture of electrons at the interface states and respective increase in the height of key barriers. A mechanism of current oscillations is related to the current quasi-saturation. An increase in the height of key barriers leads to a raise of the voltage drop at these barriers and to Joule heating of barrier regions followed by decrease in the barrier height. The suggested mechanism of non-Ohmic conduction is confirmed by the obtained experimental data.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0921-4526</s0></fA01><fA03 i2="1"><s0>Physica, B Condens. matter</s0></fA03><fA05><s2>428</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Non-Ohmic conduction in In<sub>2</sub>O<sub>3</sub>-Bi<sub>2</sub>O<sub>3</sub> ceramics</s1></fA08><fA11 i1="01" i2="1"><s1>GLOT (A. B.)</s1></fA11><fA11 i1="02" i2="1"><s1>MAZURIK (S. V.)</s1></fA11><fA14 i1="01"><s1>Universidad Tecnológica de la Mixteca, Huajuapan de León</s1><s2>Oaxaca 69000</s2><s3>MEX</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Dniepropetrovsk National University</s1><s2>Dniepropetrovsk 49010</s2><s3>UKR</s3><sZ>2 aut.</sZ></fA14><fA20><s1>65-72</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>145B</s2><s5>354000505833930120</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>51 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0305126</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica. B, Condensed matter</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The semiconductor In<sub>2</sub>O<sub>3</sub>-Bi<sub>2</sub>O<sub>3</sub> ceramics exhibit unusual behaviour: The current quasi-saturation (current limiting) in dc current-voltage characteristic is accompanied by low-frequency (∼1 Hz) current oscillations. In this paper some electrical properties of In<sub>2</sub>O<sub>3</sub>-Bi<sub>2</sub>O<sub>3 </sub>ceramics are studied and a mechanism of non-Ohmic conduction in this material is suggested. The electrical conduction is controlled by the grain-boundary potential barriers. Assuming that the barrier heights at different grain boundaries in a sample are not identical, the current quasi-saturation is explained qualitatively by capture of electrons at the interface states and respective increase in the height of key barriers. A mechanism of current oscillations is related to the current quasi-saturation. An increase in the height of key barriers leads to a raise of the voltage drop at these barriers and to Joule heating of barrier regions followed by decrease in the barrier height. The suggested mechanism of non-Ohmic conduction is confirmed by the obtained experimental data.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70B20F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Caractéristique courant tension</s0><s5>03</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>IV characteristic</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Oscillation</s0><s5>04</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Oscillations</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>06</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>06</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Joint grain</s0><s5>07</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Grain boundaries</s0><s5>07</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Barrière potentiel</s0><s5>08</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Potential barrier</s0><s5>08</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Hauteur barrière</s0><s5>09</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Barrier height</s0><s5>09</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Piégeage porteur charge</s0><s5>10</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Charge carrier trapping</s0><s5>10</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Captura portador carga</s0><s5>10</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Etat interface</s0><s5>11</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Interface states</s0><s5>11</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Effet Joule</s0><s5>13</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Joule heating</s0><s5>13</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Oxyde d'indium</s0><s5>15</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Indium oxide</s0><s5>15</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Indio óxido</s0><s5>15</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Oxyde de bismuth</s0><s5>16</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Bismuth oxide</s0><s5>16</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Bismuto óxido</s0><s5>16</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>17</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>17</s5></fC03><fN21><s1>287</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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